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Advanced Lithography for Integrated Systems Lab. (ALIS)

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A paper accepted in Journal of Power sources

작성자Admin  조회수1,318 Date2020-02-19
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Although silicon (Si) attracts great attention as a high-capacity anode material in lithium ion batteries (LiBs), a large volume being expanded during charge/discharge (de/lithiation) cycling is a significant problem resulting in a fast capacity fade. To prevent the problem, a variety of Si structures with nano/microscales have been incorporated into the anode, but such structures still have difficulties in terms of mass production. Herein, we present a new way to repetitively produce micron boron (B)-doped Si rods from Si wafer through laser interference lithography (LIL) in combination with the metal assisted chemical etching (MACE) process, enabling the mass-production of multiple Si rods at low cost. Moreover, the effects of the B-doping level of the produced Si rods on the electrochemical LiB performances are studied in detail. As a result, the lightly B-doped Si rod (~1015 atoms cm-3) anodes exhibit the highest initial capacity of 3,524 mAh g-1 and cyclic performance, showing a high average Coulombic efficiency (CE) of 98.1% and a capacity fading rate (per cycle) of 0.11% during 500 cycles. It is due to the highest kinetics of de/lithiation on the surface of the lightly B-doped Si rod attributed to favorable phase transition of Si and diffusion of Li ions.

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